Being the manner which produces the mannered, and mannered produce III group nitride semiconductor optical component null III

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a group III nitride semiconductor optical element having an excellent element characteristics by accurately measuring the intensity of a photoluminescence spectrum.;SOLUTION: A PL spectrum is measured by irradiating a substrate prodcuct E1 with excitation light L_EX. The PL spectrum comprises a constituent L_OUT2 from a GaN semiconductor region 19 and a constituent L_OUT1 from a GaN semiconductor region 17. The constituent L_OUT2 comprises a direct constituent L(D)_OUT2 and a reflection constituent L(R)_OUT2 which is reflected on the rear face 11b of the non-mirror surface of a substrate 11, and thereby generated. The constituent L_OUT1 also comprises a direct constituent L(D)_OUT1 and a reflection constituent L(R)_OUT1 which is reflected on the rear face of the non-mirror surface of the substrate 11, and thereby generated. A ratio (L_OUT2/L_OUT1) of a second constitutent L_OUT2 to a first constitutent L_OUT1 ratio is created after the measurement of the PL spectrum. The ratio is compared with a predetermined value representing the quality of the second GaN semiconductor region 19. The substrate product E1 is selected based on the comparison result.;COPYRIGHT: (C)2009,JPO&INPIT