Being the copper anode or the containing phosphor copper anode, the copper anode or the containing phosphor copper anode which is used for the electric copper plated manner to

摘要

Being the copper anode or the containing phosphor copper anode using for electric copper plating to the semiconductor wafer, the copper anode or the containing phosphor copper anode which is used for electric copper plating to the semiconductor wafer which features that content of the silicon where purity of the copper anode or the containing phosphor copper anode which excludes phosphorus is above 99.99wt%, is the impurity is below 10wtppm. The case of electric copper plating, the electric copper the semiconductor wafer which has the copper layer where the particle adhesion which is plated is little is offered suffering plated ones, the electric copper plated method where it can prevent the adhesion of the particle to the especially semiconductor wafer efficiently, the containing phosphor copper anode for electric copper plating making use of and these.