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The heat in the 2000 of the material where you enclose the pot for silicon carbide monocrystal rearing,
The heat in the 2000 of the material where you enclose the pot for silicon carbide monocrystal rearing,
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机译:封闭锅用于碳化硅单晶饲养的材料在2000年的热量,
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摘要
PROBLEM TO BE SOLVED: To provide a crucible for the growth of a SiC single crystal for producing a high quality SiC single crystal wafer which is reduced in transfer defect and has a large diameter, with high reproducibility.;SOLUTION: In an apparatus for the growth of the SiC single crystal by a sublimation re-crystallization method, the whole of the crucible is composed of a 2 or more kinds of materials each having different thermal expansion coefficient and a crucible component material of a seed crystal holding part 4 to which the SiC seed crystal 1 is attached has thermal expansion coefficient substantially smaller than that of another part. At least one kind of a component material of the crucible is made from graphite and the thermal expansion coefficient of the seed crystal holding part 4 at 2,000°C is 5.0-5.5×10-6/°C.;COPYRIGHT: (C)2009,JPO&INPIT
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机译:解决的问题:提供用于生长SiC单晶的坩埚,以生产高质量的SiC单晶晶片,该晶片减少了传输缺陷并且具有大直径,并且具有高再现性。通过升华再结晶法生长SiC单晶,坩埚整体由热膨胀系数不同的2种以上的材料和种晶保持部4的坩埚成分材料构成。附着的SiC晶种1的热膨胀系数显着小于另一部分的热膨胀系数。坩埚的至少一种组成材料由石墨制成,并且籽晶保持部4在2,000℃的热膨胀系数为5.0〜5.5×10 -6 Sup> /℃。 ; C .;版权:(C)2009,JPO&INPIT
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