Method for measuring minority carrier diffusion length and method for manufacturing silicon wafer

摘要

PROBLEM TO BE SOLVED: To provide a means of measuring a minority carrier length in a silicon wafer in a short time with high reliability.;SOLUTION: Disclosed is a method for measuring the minority carrier diffusion length in the silicon wafer by a surface photovoltage method. The measurement is carried out after the silicon wafer is surface-treated and the silicon wafer surface having been treated is irradiated with ultraviolet rays in an oxygen containing atmosphere.;COPYRIGHT: (C)2008,JPO&INPIT