Field effect transistor using supramolecular nanotubes with fullerenes on the inner and outer wall surfaces

摘要

PPROBLEM TO BE SOLVED: To provide a field-effect transistor which is manufactured with a simple and stable material and further uses an organic semiconductor excellent in an electrical property, and a semiconductor chip obtained by forming the field-effect transistor. PSOLUTION: The field-effect transistor consists of a potential transportation material having a nano size structure of which layers consist of fullerenes combined with both sides on an inner wall front surface and an outer wall front surface through self-organization of molecules with which the fullerenes are connected. There is obtained the semiconductor chip in which the field-effect transistor is formed. PCOPYRIGHT: (C)2009,JPO&INPIT