Low-resistance electrodes of the compound semiconductor light emitting device and a compound semiconductor light-emitting device using the same

摘要

PROBLEM TO BE SOLVED: To provide a low-resistance electrode of a compound semiconductor light-emitting element, and to provide a compound semiconductor light-emitting element which uses the same.;SOLUTION: A low-resistance electrode, stacked on a p-type semiconductor layer of a compound semiconductor light-emitting element which includes an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, is provided with: a reflection electrode which is stacked on the p-type semiconductor layer and reflects the light emitted from the active layer; and an aggregation phenomenon preventing electrode which is stacked on the reflection electrode layer, in order to prevent an aggregation of the reflection electrode layer during a thermal treatment.;COPYRIGHT: (C)2005,JPO&NCIPI