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The CMOS image sensor whose global exposure is possible without problem of the flake or overflow and the photodiode territory which is formed
The CMOS image sensor whose global exposure is possible without problem of the flake or overflow and the photodiode territory which is formed
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机译:CMOS图像传感器,可以全面曝光,而不会出现片状或溢流和形成的光电二极管区域
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摘要
An CMOS image sensor includes a photodiode region generating electrical charges in response to incident light received thereat. In one example, the CMOS image sensor further includes first and second transfer gates adapted to prevent or substantially prevent the electrical charges from overflowing into a floating diffusion region or a storage diffusion region located on opposite sides of the photodiode region. In this example, a read diffusion region is formed in the semiconductor substrate on an opposite side of the storage diffusion region relative to the photodiode region and a reset diffusion region is formed in the semiconductor substrate on an opposite side of the floating diffusion region relative to the photodiode region. The read diffusion region may be electrically connected to the floating diffusion region by a connection line.
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