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Method of manufacturing the electrostatic chucking electrode, the substrate processing apparatus and an electrostatic chucking electrode
Method of manufacturing the electrostatic chucking electrode, the substrate processing apparatus and an electrostatic chucking electrode
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机译:静电吸盘电极的制造方法,基板处理装置以及静电吸盘电极
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摘要
PROBLEM TO BE SOLVED: To provide an electrostatic attraction electrode that suppresses the formation of a crack on an insulating layer, to provide a substrate processor thereof, and to provide a manufacturing method for the electrostatic attraction electrode.;SOLUTION: An electrostatic chuck 40b includes a base material 41, a second insulating layer 44b that is an alumina-sprayed film, and a first insulating layer 42b interposed between the base material 41 and the second insulating layer 44b. The first insulating layer 42b is made of a ceramic-sprayed film having a linear expansion coefficient that is different from a linear expansion coefficient of the base material 41 by an absolute value of 14×10-6[/°C] or less. The first insulating layer 42b functions as a buffering layer, which improves the heat resistance of the electrostatic chuck 40b to suppress crack formation.;COPYRIGHT: (C)2008,JPO&INPIT
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