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Method of manufacturing the electrostatic chucking electrode, the substrate processing apparatus and an electrostatic chucking electrode

机译:静电吸盘电极的制造方法,基板处理装置以及静电吸盘电极

摘要

PROBLEM TO BE SOLVED: To provide an electrostatic attraction electrode that suppresses the formation of a crack on an insulating layer, to provide a substrate processor thereof, and to provide a manufacturing method for the electrostatic attraction electrode.;SOLUTION: An electrostatic chuck 40b includes a base material 41, a second insulating layer 44b that is an alumina-sprayed film, and a first insulating layer 42b interposed between the base material 41 and the second insulating layer 44b. The first insulating layer 42b is made of a ceramic-sprayed film having a linear expansion coefficient that is different from a linear expansion coefficient of the base material 41 by an absolute value of 14×10-6[/°C] or less. The first insulating layer 42b functions as a buffering layer, which improves the heat resistance of the electrostatic chuck 40b to suppress crack formation.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种静电吸引电极,其抑制绝缘层上的裂纹的形成,提供其基板处理器,并提供该静电吸引电极的制造方法。解决方案:静电吸盘40b包括基材41,作为氧化铝喷涂膜的第二绝缘层44b,和介于基材41与第二绝缘层44b之间的第一绝缘层42b。第一绝缘层42b由陶瓷喷涂膜制成,该陶瓷喷涂膜的线性膨胀系数与基材41的线性膨胀系数相差的绝对值为14×10 -6 [/ ℃以下。第一绝缘层42b用作缓冲层,其提高了静电卡盘40b的耐热性以抑制裂纹的形成。;版权所有:(C)2008,日本特许厅&INPIT

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