Method for protecting the electrostatic discharge protection device and the semiconductor device from electrostatic discharge event

摘要

For the purpose of protecting the semiconductor device against static discharge events, methods and devices are provided. P ⁺ type anode region formed (104), the silicon substrate a silicon substrate (116), electrostatic discharge protection device (100) is provided in series with the P ⁺ type anode region in the silicon substrate N-well device region has a (120), the silicon substrate in series with the N-well device region of said first P-well device region and the first (122), the silicon substrate ^{N +} cathode region (118) I equipped with a door. Is provided (114) a gate electrode covering at least substantially over the P-well device region and N-well device the first region of the silicon substrate.