首页> 外国专利> Each beam of manipulation mannered null gallium convergence ion beam, argon convergence ion beam,

Each beam of manipulation mannered null gallium convergence ion beam, argon convergence ion beam,

机译:每束操纵光束都称为零镓会聚离子束,氩会聚离子束,

摘要

PROBLEM TO BE SOLVED: To provide a processing/observing device of a semiconductor that can reduce a time spent for drawing processing and has high precision in the processing/observation of a sample.;SOLUTION: The processing/observing device of a semiconductor comprises: a processing device irradiating ion beams for drawing processing including Ga ion beams; a scanning electron microscope device irradiating electron beams; a powder removing device irradiating ion beams for powder removal including Ar ion beams; a vacuum vessel storing the three devices in a bulk; and a placement table that is placed in the vacuum vessel and places a sample. The processing/observing device is arranged so that each beam emitted by the three devices is gathered at the sample, includes a detector detecting secondary electrons generated from the sample by the irradiation of electron beams, and allows an acceleration voltage of the scanning electron microscope device irradiating electron beams to be approximately 0.6-3 keV.;COPYRIGHT: (C)2009,JPO&INPIT
机译:要解决的问题:提供一种半导体的处理/观察装置,其可以减少绘制处理所花费的时间并且在样品的处理/观察中具有高精度。解决方案:半导体的处理/观察装置包括:处理装置照射包含Ga离子束的离子束以进行拉伸加工;扫描电子显微镜装置,其照射电子束。粉末去除装置照射包括Ar离子束的用于去除粉末的离子束;真空容器,将三个设备散装存放;放置台放置在真空容器中并放置样品。布置处理/观察装置,使得由三个装置发射的每个束在样品处聚集,包括检测器,该检测器检测通过电子束的照射从样品产生的二次电子,并且允许扫描电子显微镜装置的加速电压。辐照电子束大约为0.6-3 keV 。;版权所有:(C)2009,日本特许厅

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号