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After the photoresist burbling and the metal etching you install in high chamber temperature process and the chamber design null

机译:在光致抗蚀剂破裂和金属蚀刻之后,您需要在较高的腔室温度过程中进行安装,并且腔室设计无效

摘要

Vacuum chamber for removing the photoresist layer formed on a semiconductor substrate and / or passivated. It includes an internal chamber body, the internal chamber body, a plurality of gas passages forming a cavity for surrounding the substrate, leading to the cavity and extending through the internal chamber body, the chamber 1 for heating the internal chamber body and a heater of one or many. The outer chamber body on surrounding a state where there is a gap between the sides of the interior chamber, the internal chamber body, slidably mounted. The apparatus also is mounted within the chamber body on to cover in the presence of a gap between the exhaust unit which is operative to pump suction and discharge the gas from the cavity, the upper surface of the internal chamber body, in fluid communication with the gas passage and a plasma source coupled to the opening to be able to operate to the plasma state by exciting having an opening, a chamber top part, a gas, is in fluid communication with the cavity.
机译:真空室,用于去除形成在半导体衬底上和/或被钝化的光刻胶层。它包括内部腔室主体,内部腔室主体,形成用于围绕基板的腔的多个气体通道,通向该腔并延伸穿过内部腔体,用于加热内部腔体的腔室1和加热器的加热器。一个或多个。外室主体围绕可滑动地安装在内室主体的内部腔室的侧面之间存在间隙的状态。该装置还安装在腔室内,以在排气单元之间存在间隙时覆盖,该间隙可操作以从腔,内部腔体的上表面抽吸气体并从腔室中排出气体,并与腔室流体连通。气体通道和耦合到开口的等离子体源,通过激发具有开口,腔室顶部,气体与空腔流体连通,等离子体源能够通过激发而操作到等离子体状态。

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