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High purity crystal silicon, high purity silicon tetrachloride and those production manners

机译:高纯晶体硅,高纯四氯化硅及其生产方式

摘要

This invention can be satisfied also the portion of quality request not only the raw materials of the silicon for the solar battery, as a silicon for the up-to-date semiconductor, cheaper high purity crystal silicon and its production manner, and the high purity silicon tetrachloride which is used for the production of high purity crystal silicon and that its production manner is offered are designated as topic. As for the high purity crystal silicon of this invention, boron content is below 0.015ppmw, at the same time spelter content is 50ppbw - 1000ppbw. Production manner of the high purity crystal silicon of this invention, supplying silicon tetrachloride gases and the spelter gas inside the vertical die reactor, generates crude crystal silicon to the Tip of silicon tetrachloride gas supply nozzles by reacting with 800 - the 1200 , grows crude crystal silicon from the Tip of silicon tetrachloride gas supply nozzles facing toward the lower part, discharges the crude crystal silicon which it grew outside the reactor, features that the Acid it treats the crude crystal silicon which is discharged.
机译:本发明不仅可以满足太阳能电池用硅的原材料,作为最新半导体用硅,廉价的高纯度结晶硅及其制造方式,高纯度的部分质量要求,还可以满足本发明。用于生产高纯度晶体硅并提供其生产方式的四氯化硅被指定为主题。对于本发明的高纯度晶体硅,硼含量低于0.015ppmw,同时喷镀剂含量为50ppbw-1000ppbw。本发明的高纯度晶体硅的生产方式,在立式模反应器内供给四氯化硅气体和喷溅气体,通过与800〜1200反应而生成粗晶体硅至四氯化硅气体供给喷嘴的尖端,从而生长粗晶体。来自四氯化硅气体供应喷嘴尖端的硅朝向下部,将其生长的粗晶体硅排放到反应器外,其特征在于酸处理所排放的粗晶体硅。

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