The multilayer reflected film equipped substrate, the production manner, with respect to reflected die mask blank and the reflected

摘要

PROBLEM TO BE SOLVED: To provide a substrate with a multilayer reflection film having high surface smoothness and little defect and suitable as a reflective mask to be used in lithography using exposure light in a short wavelength region such as EUV (extreme ultravaiolet) light.;SOLUTION: The substrate with a multilayer reflection film includes a multilayer base film comprising a film of alternately deposited Mo/Si layers and a multilayer reflection film comprising a film of alternately deposited Mo/Si layers that reflects exposure light, successively layered on a substrate. The periodic length dbottom [nm] of the multilayer base film and the periodic length dtop [nm] of the multilayer reflection film are in the following relation: (1) satisfying an expression of (1):(n+0.15)×dtop≤dbottom≤(n+0.9)×dtop under the condition of dbottomdtop, wherein n represents a natural number of 1 or more; or (2) satisfying an expression of (2):dbottom≤0.6×dtop under the condition of dbottomdtop.;COPYRIGHT: (C)2007,JPO&INPIT