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Annealing of single crystal chemical vapor deposited diamond.

机译:单晶化学气相沉积金刚石的退火。

摘要

A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.
机译:通过微波等离子体化学气相沉积法生长的单晶金刚石在超过4.0 GPa的压力下退火,并加热到超过1500摄氏度的温度,其硬度大于120 GPa。用于制造硬质单晶金刚石的方法包括:生长单晶金刚石,并在超过4.0 GPa的压力和超过1500℃的温度下对单晶金刚石进行退火,以使其硬度超过120 GPa。

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