首页> 外国专利> METHOD OF QUANTITATIVE ANALYSIS OF HEXAVALENT CHROMIUM IN CHROMATE COATING AND METHOD FOR CONTROLLING HAZARDOUS ELEMENT IN ENCAPSULATING RESIN OF RESIN ENCAPSULATION SEMICONDUCTOR DEVICE

METHOD OF QUANTITATIVE ANALYSIS OF HEXAVALENT CHROMIUM IN CHROMATE COATING AND METHOD FOR CONTROLLING HAZARDOUS ELEMENT IN ENCAPSULATING RESIN OF RESIN ENCAPSULATION SEMICONDUCTOR DEVICE

机译:树脂包封半导体装置中树脂中铬含量的定量分析方法及控制树脂中有害元素的控制方法

摘要

A method for controlling a hazardous element in an encapsulating resin of a resin encapsulation semiconductor device includes subjecting the device to qualitative analysis with a fluorescent X-ray analyzer to judge whether the hazardous element is contained in the encapsulating resin, aligning a plurality of devices with each of upper and lower surfaces of the devices brought into a plane, setting the surfaces of the devices to cover a full X-ray irradiation plane and subjecting the devices to quantitative analysis with the fluorescent X-ray analyzer to obtain an analytical value of the hazardous element in the encapsulating resin for upper and lower surfaces of the devices, and judging whether the analytical value of the hazardous element which is less influenced by a coexistent element of the analytical values for the upper and lower surfaces of the devices exceeds a threshold value.
机译:一种用于控制树脂封装半导体器件的封装树脂中的有害元素的方法,包括:用荧光X射线分析仪对该器件进行定性分析,以判断封装树脂中是否包含有害元素;将多个器件对准。将设备的上,下表面均置于一个平面中,将设备的表面设置为覆盖整个X射线照射平面,然后使用荧光X射线分析仪对设备进行定量分析,以获取该设备的分析值。用于装置的上表面和下表面的封装树脂中的有害元素,并判断受该装置的上表面和下表面的分析值并存的影响较小的有害元素的分析值是否超过阈值。

著录项

  • 公开/公告号US2012264225A1

    专利类型

  • 公开/公告日2012-10-18

    原文格式PDF

  • 申请/专利权人 MITSUHIRO OKI;MIYUKI TAKENAKA;

    申请/专利号US201213523258

  • 发明设计人 MIYUKI TAKENAKA;MITSUHIRO OKI;

    申请日2012-06-14

  • 分类号G01N23/223;

  • 国家 US

  • 入库时间 2022-08-21 17:35:00

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号