HETEROSTRUCTURE FOR ELECTRONIC POWER COMPONENTS, OPTOELECTRONIC OR PHOTOVOLTAIC COMPONENTS

摘要

A heterostructure that includes, successively, a support substrate of a material having an electrical resistivity of less than 10⁻³ ohm·cm and a thermal conductivity of greater than 100 W·m⁻¹·K⁻¹, a bonding layer, a first seed layer of a monocrystalline material of composition Al_xIn_yGa_(1-x-y)N, a second seed layer of a monocrystalline material of composition Al_xIn_yGa_(1-x-y)N, and an active layer of a monocrystalline material of composition Al_xIn_yGa_(1-x-y)N, and being present in a thickness of between 3 and 100 micrometers. The materials of the support substrate, the bonding layer and the first seed layer are refractory at a temperature of greater than 750° C., the active layer and second seed layer have a difference in lattice parameter of less than 0.005 Å, the active layer is crack-free, and the heterostructure has a specific contact resistance between the bonding layer and the first seed layer that is less than or equal to 0.1 ohm·cm².