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SELECTIVE PLASMA NITRIDING METHOD AND PLASMA NITRIDING APPARATUS
SELECTIVE PLASMA NITRIDING METHOD AND PLASMA NITRIDING APPARATUS
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机译:选择性等离子体渗氮方法及等离子体渗氮装置
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摘要
A selective plasma nitriding method includes mounting an object to be processed on a mounting table in a processing chamber of a plasma processing apparatus, the object having a silicon surface and a silicon compound layer exposed; setting a pressure in the processing chamber within the range of about 66.7 Pa to 667 Pa; and generating a nitrogen-containing plasma while applying a bias voltage to the object by supplying to the mounting table a high frequency power with an output of about 0.1 W/cm2 to 1.2 W/cm2 per unit area of the object. The plasma nitriding method further includes selectively nitriding the silicon surface by the nitrogen-containing plasma to form a silicon nitride film.
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机译:一种选择性等离子体氮化方法,包括将待处理的物体安装在等离子体处理设备的处理室中的安装台上,该物体具有暴露的硅表面和硅化合物层;以及将处理室中的压力设置在大约66.7 Pa至667 Pa的范围内;通过向载物台提供输出功率约为0.1 W / cm 2 Sup>至1.2 W / cm 的高频功率,并在向对象施加偏置电压的同时生成含氮等离子体2 Sup>对象的单位面积。等离子体氮化方法还包括通过含氮等离子体选择性地氮化硅表面以形成氮化硅膜。
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