SELECTIVE PLASMA NITRIDING METHOD, AND PLASMA NITRIDING DEVICE

摘要

PPROBLEM TO BE SOLVED: To provide a method for selectively performing plasma nitriding of silicon at a high nitriding rate with a high nitrogen dosage, for a workpiece having an exposed silicon surface and an exposed silicon compound layer. PSOLUTION: The selective plasma nitriding is carried out by setting treatment pressure to 66.7 to 667 Pa and supplying high-frequency electric power of 0.1 to 1.2 W/cmSP2/SPper area of the workpiece from a high-frequency power source 44 to an electrode 42 of a placing table 2. By means of the high-frequency electric power, a bias voltage is applied to a wafer W to obtain a high Si/SiOSB2/SBselection ratio. PCOPYRIGHT: (C)2011,JPO&INPIT