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High Voltage Cascoded III-Nitride Rectifier Package Utilizing Clips on Package Support Surface
High Voltage Cascoded III-Nitride Rectifier Package Utilizing Clips on Package Support Surface
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机译:利用封装支撑表面上的夹子,实现高压级联III-氮化物整流器封装
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摘要
Some exemplary embodiments of high voltage cascoded III-nitride semiconductor package utilizing clips on a package support surface have been disclosed. One exemplary embodiment comprises a III-nitride transistor attached to a package support surface and having an anode of a diode stacked over a source of the III-nitride transistor, a first conductive clip coupled to a gate of the III-nitride transistor and the anode of the diode, and a second conductive clip coupled to a drain of the III-nitride transistor. The conductive clips are connected to the package support surface and expose respective flat portions that are surface mountable. In this manner, reduced package footprint, improved surge current capability, and higher performance may be achieved compared to conventional wire bonded packages. Furthermore, since a low cost printed circuit board (PCB) may be utilized for the package support surface, expensive leadless fabrication processes may be avoided for cost effective manufacturing.
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