首页> 外国专利> Weir design providing optimal purge gas flow, melt control, and temperature stabilization for improved single crystal growth in a continuous Czochralski process

Weir design providing optimal purge gas flow, melt control, and temperature stabilization for improved single crystal growth in a continuous Czochralski process

机译:堰设计可提供最佳的吹扫气流,熔体控制和温度稳定性,以改善连续直拉工艺中的单晶生长

摘要

A weir is extended vertically to define an optimal annular gap between the top of the weir and the underside of a super-adjacent heat shield. The annular gap provides a high velocity stream of argon gas to be directed from the growth region to the melt region to substantially eliminate the transport of airborne particles from the melt region to the growth region. The tall weir may be configured as a modular, reusable weir extension supportably engaged with an outer (and/or inner) weir.
机译:堰垂直延伸,以在堰的顶部与超相邻隔热屏的底面之间限定最佳的环形间隙。环形间隙提供了将氩气从生长区域引导至熔融区域的高速气流,从而基本消除了气载颗粒从熔融区域向生长区域的传输。高堰可被配置为与外部(和/或内部)堰可支撑地接合的模块化可重复使用的堰延伸部。

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