InP-Based Multi-Junction Photovoltaic and Optoelectronic Devices

摘要

Lattice-matched II-VI (ZnCdHg)(SeTe) and III-V (InGaAsP) semiconductors grown on InP substrates can be used for preparing multi junction solar cells that can potentially reach efficiencies greater than 40% under one sun. For example, a semiconductor structure can be prepared comprising, an InP substrate; an optional InGaAsP building block formed over the InP substrate; an InP building block formed over either the InGaAsP building block, when present, or the InP substrate and at least one (ZnCdHg)(SeTe) building block formed over the InP building block.