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Enhanced copper growth with ultrathin barrier layer for high performance interconnects
Enhanced copper growth with ultrathin barrier layer for high performance interconnects
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机译:具有超薄势垒层的高性能互连的增强铜生长
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摘要
A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.
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