CONDUCTIVE LAYER BURIED-TYPE SUBSTRATE, METHOD OF FORMING THE CONDUCTIVE LAYER BURIED-TYPE SUBSTRATE, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE CONDUCTIVE LAYER BURIED-TYPE SUBSTRATE

摘要

A conductive layer buried-type substrate is disclosed. The substrate includes a silicon oxidation layer bonded to a supporting substrate, an adhesion promotion layer that is formed on the silicon oxidation layer and improves an adhesion between the silicon oxidation layer and a conductive layer, wherein the conductive layer is formed on the adhesion promotion layer and comprises a metal layer, and a single crystal semiconductor layer formed on the conductive layer.