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Reduction of random telegraph signal (RTS) and 1/f noise in silicon MOS devices, circuits, and sensors
Reduction of random telegraph signal (RTS) and 1/f noise in silicon MOS devices, circuits, and sensors
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机译:降低硅MOS器件,电路和传感器中的随机电报信号(RTS)和1 / f噪声
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摘要
The effects of random telegraph noise signal (RTS) or equivalently l/f noise on MOS devices, circuits, and sensors is described. Techniques are disclosed for minimizing this RTS and low frequency noise by minimizing the number of ionized impurity atoms in the wafer, substrate, well, pillar, or fin behind the channel of the MOS transistors. This noise reduction serves to reduce the errors in devices, sensors, and analog integrated circuits and error rates in digital integrated circuits and memories.
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