首页> 外国专利> Method for forming functional element using metal-to-insulator transition material, functional element formed by method, method for producing functional device, and functional device produced by method

Method for forming functional element using metal-to-insulator transition material, functional element formed by method, method for producing functional device, and functional device produced by method

机译:使用金属-绝缘体过渡材料形成功能元件的方法,通过该方法形成的功能元件,该功能元件的制造方法以及通过该方法制成的功能元件

摘要

A method for forming a functional element includes a first step of forming an insulating layer composed of an insulator phase of a transition metal oxide serving as a metal-to-insulator transition material, the transition metal oxide being mainly composed of vanadium dioxide, and a second step of causing part of the insulating layer to transition to a metallic phase, in which the insulator phase differs from the metallic phase in terms of electrical resistivity and/or light transmittance.
机译:一种形成功能元件的方法,包括形成绝缘层的第一步,该绝缘层由用作金属-绝缘体过渡材料的过渡金属氧化物的绝缘相构成,该过渡金属氧化物主要由二氧化钒构成,并且使绝缘层的一部分过渡到金属相的第二步骤,其中绝缘体相在电阻率和/或透光率方面不同于金属相。

著录项

  • 公开/公告号US8298905B2

    专利类型

  • 公开/公告日2012-10-30

    原文格式PDF

  • 申请/专利权人 DAISUKE ITO;

    申请/专利号US20100720220

  • 发明设计人 DAISUKE ITO;

    申请日2010-03-09

  • 分类号H01L21/20;

  • 国家 US

  • 入库时间 2022-08-21 17:29:42

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