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Silicon germanium heterojunction bipolar transistor having interstitial trapping layer in base region
Silicon germanium heterojunction bipolar transistor having interstitial trapping layer in base region
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机译:在基极区具有间隙俘获层的硅锗异质结双极晶体管
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摘要
A heterojunction bipolar transistor (HBT), an integrated circuit (IC) chip including at least one HBT and a method of forming the IC. The HBT includes an extrinsic base with one or more buried interstitial barrier layer. The extrinsic base may be heavily doped with boron and each buried interstitial barrier layer is doped with a dopant containing carbon, e.g., carbon or SiGe:C. The surface of the extrinsic base may be silicided.
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