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Group-III nitride epitaxial layer on silicon substrate
Group-III nitride epitaxial layer on silicon substrate
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机译:硅衬底上的III族氮化物外延层
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摘要
A semiconductor device includes a silicon substrate; silicon faceted structures formed on a top surface of the silicon substrate; and a group-III nitride layer over the silicon faceted structures. The silicon faceted structures are separated from each other, and have a repeated pattern.
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