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Silicon-nitrogen compound film, and gas-barrier film and thin-film device using the silicon-nitrogen compound film
Silicon-nitrogen compound film, and gas-barrier film and thin-film device using the silicon-nitrogen compound film
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机译：硅氮化合物膜以及使用该硅氮化合物膜的阻气膜和薄膜装置
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摘要
A silicon-nitrogen compound film according to the first aspect of the present invention is made of a material expressed by a compositional formula Si3NxOyHz, where 10≦(3x+2y)≦12, 3.4≦x≦4.0, 0≦y, 0≦z2.0, the peak-area ratio of a first area of a first peak appearing near a wave number of 2150 cm−1 in a Fourier-transform infrared absorption spectrum of the material and corresponding to a Si—H stretching vibration to a second area of a second peak appearing near a wave number of 810 cm−1 in the Fourier-transform infrared absorption spectrum and corresponding to a Si—N stretching vibration is smaller than 0.2, and the silicon-nitrogen compound film has a thickness t (in nanometers) and a density d (g/cm3) which satisfy the inequalities,1.9≦d≦2.5, and−700d+1930≦6t≦−700d+2530.
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机译：根据本发明的第一方面的硅-氮化合物膜由由组成式Si 3 N x O y H z ，其中10≤（3x + 2y）≤12、3.4≤x≤4.0、0≤y，0≤z<2.0，a的第一区域的峰面积比在材料的傅立叶变换红外吸收光谱中，第一个峰出现在波数2150 cm -1 附近，并且对应于Si-H拉伸振动，第二个峰出现在第二个峰附近傅立叶变换红外吸收光谱中对应于Si-N拉伸振动的波数为810 cm -1 小于0.2，并且硅氮化合物膜的厚度为t（纳米） ）和满足不等式的密度d（g / cm 3 ），<？in-line-formulae description =“在线公式” end =“ lead”？> 1.9≦d≦2.5，<？in-line-formulae description =“在线公式” end =“ tail”？ > <？in-line-formulae description =“在线表达式” end =“ lead”？> − 700d + 1930≦6t≦−700d + 2530。<？in-line-formulae description =“在线表达式” end =“ tail”？>
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