Electrolytic copper plating method, phosphorous copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode

摘要

An electrolytic copper plating method characterized in employing a phosphorous copper anode having a crystal grain size of 1,500 μm (or more) to 20,000 μm in an electrolytic copper plating method employing a phosphorous copper anode. Upon performing electrolytic copper plating, an object is to provide an electrolytic copper plating method of a semiconductor wafer for preventing the adhesion of particles, which arise at the anode side in the plating bath, to the plating object such as a semiconductor wafer, a phosphorous copper anode for electrolytic copper plating, and a semiconductor wafer having low particle adhesion plated with such method and anode.