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Film having cobalt selenide nanowires and method of forming same

机译:具有硒化钴纳米线的膜及其形成方法

摘要

A method for making a film having an array of cobalt selenide nanowires including: providing an aluminum substrate; anodizing the aluminum substrate to form anodized aluminum including an aluminum oxide layer having a plurality of pores therein on a surface of the aluminum substrate; preparing an electrodeposition composition including a source of cobalt ions and a source of selenite ions; contacting the anodized aluminum with the electrodeposition composition; and applying AC current to the anodized aluminum for a sufficient duration to electrodeposit cobalt selenide into the pores to form a film having an array of oriented cobalt selenide nanowires. According to a different aspect, a film has an aluminum substrate; an oxide layer having a plurality of pores therein on a surface of the aluminum substrate; and an array of cobalt selenide nanowires disposed in the pores.
机译:一种用于制造具有硒化钴纳米线阵列的膜的方法,包括:提供铝基板;以及将所述铝基板形成为铝基板。对铝基板进行阳极氧化以形成阳极氧化铝,该阳极氧化铝包括在铝基板的表面上具有多个孔的氧化铝层。制备包含钴离子源和亚硒酸根离子源的电沉积组合物;使阳极氧化铝与电沉积组合物接触;将交流电流施加到阳极氧化铝上足够的时间,以将硒化钴电沉积到孔中以形成具有取向的硒化钴纳米线阵列的膜。根据不同的方面,膜具有铝基板;该铝基板具有铝基板。在铝基板的表面上具有多个孔的氧化物层。排列在孔中的硒化钴纳米线阵列。

著录项

  • 公开/公告号US8157979B2

    专利类型

  • 公开/公告日2012-04-17

    原文格式PDF

  • 申请/专利权人 ALEXANDRE D. LIFCHITS;

    申请/专利号US20090401429

  • 发明设计人 ALEXANDRE D. LIFCHITS;

    申请日2009-03-10

  • 分类号C25D5/02;

  • 国家 US

  • 入库时间 2022-08-21 17:29:01

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