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Methods of manufacturing semiconductor devices including forming (111) facets in silicon capping layers on source/drain regions
Methods of manufacturing semiconductor devices including forming (111) facets in silicon capping layers on source/drain regions
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机译:制造半导体器件的方法,包括在源/漏区上的硅覆盖层中形成(111)小面
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摘要
A method of manufacturing a semiconductor device includes forming a gate electrode on a semiconductor substrate and a sidewall spacer on the gate electrode. Then, a portion of the semiconductor substrate at both sides of the sidewall spacer is partially etched to form a trench. A SiGe mixed crystal layer is formed in the trench. A silicon layer is formed on the SiGe mixed crystal layer. A portion of the silicon layer is partially etched using an etching solution having different etching rates in accordance with a crystal direction of a face of the silicon layer to form a capping layer including a silicon facet having an (111) inclined face.
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