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QUANTUM DOT SENSITIZED WIDE BANDGAP SEMICONDUCTOR PHOTOVOLTAIC DEVICES amp; METHODS OF FABRICATING SAME
QUANTUM DOT SENSITIZED WIDE BANDGAP SEMICONDUCTOR PHOTOVOLTAIC DEVICES amp; METHODS OF FABRICATING SAME
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机译:量子点敏感的宽带隙半导体光电器件及其制造方法
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摘要
A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with Eg2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with Eg2.0 eV, in the form of quantum dots (QD's) filling each open space defined by the matrix of WBG semiconductor material and establishing a heterojunction therewith. The active PV layer is preferably fabricated by a co-sputter deposition process, and the QD's constitute from about 40 to about 90 vol. % of the active PV layer.
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机译:量子点(QD)敏化宽带隙(WBG)半导体异质结光伏(PV)器件包括电子导电层;与电子导电层相邻的有源光伏(PV)层;与有源PV层相邻的空穴导电层;电极层与空穴导电层相邻。有源PV层包括具有至少两个开放空间的二维矩阵形式的E g Sub 2.0 eV的宽带隙(WBG)半导体材料和具有E g Sub> <2.0 eV,以量子点(QD)的形式填充由WBG半导体材料矩阵定义的每个开放空间,并与其建立异质结。活性PV层优选地通过共溅射沉积工艺来制造,并且QD构成从大约40到大约90vol。%。活性PV层的%。
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