Disclosed is a method of driving a multi-level variable resistive memory device. A method of driving a multi-level variable resistive memory device includes supplying a write current to a variable resistive memory cell so as to change resistance of the variable resistive memory cell, verifying whether or not changed resistance enters a predetermined resistance window, the intended resistance window depending on the resistance of reference cells, and supplying a write current having an increased or decreased amount from the write current supplied most recently on the basis of the verification result so as to change resistance of the variable resistive memory cell.
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