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Device and process for growing Ga-doped single silicon crystals suitable for making solar cells
Device and process for growing Ga-doped single silicon crystals suitable for making solar cells
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机译:生长适于制造太阳能电池的掺镓单晶的装置和方法
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摘要
A device and method for producing Ga doped silicone single crystal with a diameter between 150 and 165 mm and a narrow resistivity distribution range (from 3 Ω·cm to 0.5 Ω·cm). The device is characterized by the use of a shorter heater and a funnel shaped gas flow guide capable of blowing an inert gas such as Ar straight to the crystallization frontier at the interface between outer surface of the nascent single crystal ingot and the surface of the melt of polycrystalline silicone raw materials in a quartz crucible.
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