Semiconductor wafer structure with balanced reflectance and absorption characteristics for rapid thermal anneal uniformity

摘要

Disclosed are embodiments of semiconductor wafer structures and associated methods of forming the structures with balanced reflectance and absorption characteristics. The reflectance and absorption characteristics are balanced by manipulating thin film interferences. Specifically, thin film interferences are manipulated by selectively varying the thicknesses of the different films. Alternatively, reflectance and absorption characteristics can be balanced by incorporating an additional reflectance layer into the wafer structure above the substrate. Methods of forming a semiconductor structure begin by forming a substrate, forming an insulator layer on the substrate, and forming a first film on a first portion of the insulator layer. Methods form a second film, different from the first film, on a second portion of the insulator layer adjacent to the first film such that a first net reflectivity of the first film, the insulator layer, and the substrate is approximately equal to a second net reflectivity of the second film, the insulator layer and the substrate.