首页> 外国专利> Memory device including combination SRAM-ROM cells and SRAM cells alternately arranged and semiconductor device including the memory device

Memory device including combination SRAM-ROM cells and SRAM cells alternately arranged and semiconductor device including the memory device

机译:包括交替布置的组合SRAM-ROM单元和SRAM单元的存储器件以及包括该存储器件的半导体器件

摘要

A combination memory device including a static random access memory (SRAM) and a read only memory (ROM) comprises first memory cells and second memory cells arranged in rows and columns, in which each of the first memory cells includes an SRAM cell and a ROM cell and is arranged adjacent to at least one of the second memory cells, and each of the second memory cells includes an SRAM cell and does not include a ROM cell.
机译:包括静态随机存取存储器(SRAM)和只读存储器(ROM)的组合存储装置包括以行和列布置的第一存储单元和第二存储单元,其中每个第一存储单元包括SRAM单元和ROM该第二存储单元与第二存储单元中的至少一个相邻,并且每个第二存储单元包括SRAM单元,并且不包括ROM单元。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号