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System for generating and optimizing mask assist features based on hybrid (model and rules) methodology
System for generating and optimizing mask assist features based on hybrid (model and rules) methodology
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机译:基于混合(模型和规则)方法生成和优化面罩辅助功能的系统
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摘要
An optimal assist feature rules set for an integrated circuit design layout is created using inverse lithography. The full chip layout is lithographically simulated, and printability failure areas are determined. The features are analyzed for feature layout patterns, and inverse lithography is performed on the unique feature layouts to form assist features. The resulting layout of assist features is analyzed to create an assist feature rules set. The rules can then be applied to a photomask patterned with the integrated circuit design layout to print optimal assist features. The resulting photomask may be used to form an integrated circuit on a semiconductor substrate.
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