首页>
外国专利>
Magneto-resistance effect element having a diffusive electron scattering layer, magneto-resistance effect head, magnetic storage and magnetic memory
Magneto-resistance effect element having a diffusive electron scattering layer, magneto-resistance effect head, magnetic storage and magnetic memory
展开▼
机译:具有扩散电子散射层的磁阻效应元件,磁阻效应头,磁存储器和磁存储器
展开▼
页面导航
摘要
著录项
相似文献
摘要
A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.
展开▼