Ferroelectric memory and method in which polarity of domain of ferroelectric memory is determined using ratio of currents

摘要

Methods and arrangements for data storage are discussed. Embodiments include applying a first voltage between a tip and an electrode, thereby forming a polarized domain in a ferroelectric material between 1 nanometer (nm) and 50 nm in thickness. The embodiments may also include applying another voltage through the tip, thereby generating a current responsive to an orientation of the polarized domain. The embodiments may also include measuring the current and determining the orientation of the polarized domain, based upon the measuring.