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Mechanical switching in ferroelectrics by shear stress and its implications on charged domain wall generation and vortex memory devices

机译：通过剪切应力机械切换铁电解及其对带电域壁生成和涡流记忆装置的影响

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W. J. Chen; Shuai Yuan; L. L. Ma; Ye Ji; Biao Wang; Yue Zheng;
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1. Mechanical switching in ferroelectrics by shear stress and its implications on charged domain wall generation and vortex memory devices [J] . Chen W. J., Yuan Shuai, Ma L. L., RSC Advances . 2018,第8期

机译：通过剪切应力机械切换铁电解及其对带电域壁生成和涡流记忆装置的影响
2. Mechanical switching in ferroelectrics by shear stress and its implications on charged domain wall generation and vortex memory devices [J] . W. J. Chen, Shuai Yuan, L.?L. Ma, RSC Advances . 2018,第8期

机译：铁电体中剪切应力的机械转换及其对带电畴壁产生和涡流存储器件的影响
3. Forward growth of ferroelectric domains with charged domain walls. Local switching on non-polar cuts [J] . V. Ya. Shur, E. V. Pelegova, A. P. Turygin, Journal of Applied Physics . 2021,第4期

机译：带电荷畴壁的铁电畴的前进生长。局部切换非极性切口
4. DIRECT OBSERVATION OF FERROELECTRIC DOMAIN WALL MOTION UNDER MECHANICAL STRESS IN THE ESEM [C] . Angelika Reichmann, K. Reichmann, A. Zankel, 10th EMAS regional workshop on electron probe microanalysis of materials today : Practical aspects . 2012

机译：ESEM中机械应力作用下铁电域壁运动的直接观测
5. Domain wall engineering of nanoscale ferromagnetic elements and its application for memory devices. [D] . Florez, Sylvia H. 2006

机译：纳米级铁磁元件的畴壁工程及其在存储设备中的应用。
6. Enhanced electromechanical response of ferroelectrics due to charged domain walls [O] . Tomas Sluka, Alexander K. Tagantsev, Dragan Damjanovic, -1

机译：由于带电畴壁增强了铁电体的机电响应
7. Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories [O] . Jun Jiang, Zi Long Bai, Zhi Hui Chen, 2017

机译：用于非破坏性读出铁电畴壁电阻开关存储器的高导电域壁的临时形成

Mechanical switching in ferroelectrics by shear stress and its implications on charged domain wall generation and vortex memory devices

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