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Programming MRAM cells using probability write
Programming MRAM cells using probability write
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机译:使用概率写入对MRAM单元进行编程
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摘要
A method of writing a magneto-resistive random access memory (MRAM) cell includes providing a writing pulse to write a value to the MRAM cell; and verifying a status of the MRAM cell immediately after the step of providing the first writing pulse. In the event of a write failure, the value is rewritten into the MRAM cell.
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