首页> 外国专利> HIGH-RESOLUTION MAGNETIC FIELD SENSOR INTEGRAL WITH A SILICON BEAM RESONANT STRUCTURE MANUFACTURED IN MEMS TECHNOLOGY.

HIGH-RESOLUTION MAGNETIC FIELD SENSOR INTEGRAL WITH A SILICON BEAM RESONANT STRUCTURE MANUFACTURED IN MEMS TECHNOLOGY.

机译:MEMS技术制造的具有硅束谐振结构的高分辨率磁场传感器集成件。

摘要

The invention refers to a magnetic field in MEMS technology which uses the Principle of Lorentz force for measuring the small magnetic fields (40 ÁT-2000 ÁT) with a high resolution (43 nT). This sensor has a linear response and a quality factor of Q=96.60 and a magnetic sensitivity of 1.94 VT-1. Furthermore, this sensor has a simple and compact structure, which is relatively easily manufactured and used in novel applications where tiny (of the micrometres order) sensors are required, of small weight, low power consumption and with a high resolution. The invention has the purpose of providing an improved resonant structure of silicon beams, which may detect the linear shape of small magnetic fields. In addition, the invention may be used in emerging applications that require measuring magnetic fields with high resolution and without using compensation circuits for compensating the nonlinearity problems. The sensor has a simple detection mechanism which consists in a Wheatstone bridge o f piezoresistors of the p type.
机译:本发明涉及一种MEMS技术中的磁场,其利用洛伦兹力原理测量高分辨率(43nT)的小磁场(40A-2000A)。该传感器具有线性响应,品质因数为Q = 96.60,磁灵敏度为1.94 VT-1。此外,该传感器具有简单且紧凑的结构,该结构相对容易制造并用于需要微型传感器(微米级),重量轻,功耗低且具有高分辨率的新型应用中。本发明的目的是提供一种改进的硅束共振结构,其可以检测小磁场的线性形状。另外,本发明可以用于需要以高分辨率测量磁场并且不使用补偿电路来补偿非线性问题的新兴应用中。该传感器具有简单的检测机制,该机制包括p型惠斯通电桥或压敏电阻。

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