Procedure chemical vapor deposition at atmospheric pressure to produce a thin n-semiconductor layer metal sulfide

摘要

Chemical deposition process in the gas phase at atmospheric pressure (APCVD) to produce a thin layer of n-semiconducting metal sulfide on a heated substrate with a precursor containing the metal and hydrogen sulfide (H2S) as reactive gaseous precursor and stream of inert carrier gas, characterized in that, for the manufacture of a thin layer compact indium sulphide (In2S3) to a liquid or gaseous phase a precursor containing indium (prin (g / fl)) it is having himself transferred a high pressure steam or forms a volatile adduct with a solvent, said precursor is mixed in a mixing region (MP) with the stream of inert carrier gas (IG) and hydrogen sulfide (PRH2S (g)), that it is fed in such an amount resulting absolute concentration of hydrogen sulfide (H2S) or below 1% by volume, and said mixture is conducted to the substrate (SU) heated to a temperature (T) with 100º C =; T = 275 ° C, whichever is the concentration of In precursor containing indium (prin (g / fl)) so that the thin layer of indium sulfide (In2S3) to make it compact.