首页> 外国专利> METHOD AND DEVICE FOR FORMING SOLDER DEPOSITS ON RAISED CONTACT METALLIZATION STRUCTURES

METHOD AND DEVICE FOR FORMING SOLDER DEPOSITS ON RAISED CONTACT METALLIZATION STRUCTURES

机译:凸起接触金属化结构上形成熔敷层的方法和装置

摘要

The invention relates to a method for forming solder deposits (34) on raised contact metallization structures (24) of connection surfaces (23) of a substrate (19) designed in particular as a semiconductor component, wherein wetting surfaces (26) of the contact metallization structures (24) are brought in contact with a solder material layer (15) arranged on a solder material carrier (13), the substrate (19) is heated and the temperature of the solder material layer (15) is controlled at least during the duration of the contact, and subsequently the contact metallization structures (24) wetted with solder material (34) and the solder material layer (15) are separated, thus making it possible to prevent the formation of contact bridges between adjoining contact metallization structures (24) resulting from the surface tension of fused solder material when the wetting surfaces (26) of the contact metallization structures (24) and the solder material layer (15) are separated.
机译:本发明涉及一种在衬底(19)的连接表面(23)的凸起的接触金属化结构(24)上形成焊料沉积物(34)的方法,该衬底特别是设计为半导体部件,其中接触的润湿表面(26)使金属化结构(24)与布置在焊料材料载体(13)上的焊料材料层(15)接触,加热基板(19),并且至少在此期间控制焊料材料层(15)的温度。接触的持续时间,以及随后被焊料材料(34)润湿的触点金属化结构(24)和焊料材料层(15)分开,从而可以防止在相邻的触点金属化结构之间形成接触桥(当接触金属化结构(24)的润湿表面(26)和焊料材料层(15)分离时,由熔化的焊料材料的表面张力产生24)。

著录项

  • 公开/公告号WO2011127907A3

    专利类型

  • 公开/公告日2012-05-31

    原文格式PDF

  • 申请/专利号WO2011DE00394

  • 发明设计人 AZDASHT GHASSEM;

    申请日2011-04-13

  • 分类号H01L21/60;H01L23/485;H01L21/683;B23K3/06;

  • 国家 WO

  • 入库时间 2022-08-21 17:19:04

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