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PROCESS CHAMBER LID DESIGN WITH BUILT-IN PLASMA SOURCE FOR SHORT LIFETIME SPECIES

机译:具有内置等离子体源的过程腔盖设计,可用于短寿命物种

摘要

Embodiments of the invention generally relate to an apparatus and a method for depositing materials, and more particularly to a vapor deposition chamber configured to deposit a material during a plasma-enhanced process. In one embodiment a chamber for processing one or more substrates is provided. The chamber body comprises a chamber body defining a process volume, a substrate support disposed in the process volume and configured to support one or more substrates, a process lid assembly disposed over the substrate support, wherein the process lid assembly has a plasma cavity configured to generate a plasma and provide one or more radical species to the process volume, a RF (radio frequency) power source coupled to the gas distribution assembly, a plasma forming gas source coupled with the process lid assembly, and a reactant gas source coupled with the process lid assembly.
机译:本发明的实施例总体上涉及一种用于沉积材料的设备和方法,并且更具体地涉及一种被配置为在等离子体增强工艺期间沉积材料的气相沉积室。在一个实施例中,提供了一种用于处理一个或多个基板的腔室。腔室主体包括:腔室主体,其限定处理体积;基板支撑件,其布置在处理体积中并被配置为支撑一个或多个基板;处理盖组件,其被布置在基板支撑件上方,其中,处理盖组件具有被配置为用于等离子体处理的等离子体腔。产生等离子体并向处理量提供一种或多种自由基物质,与气体分配组件耦合的RF(射频)电源,与处理盖组件耦合的等离子体形成气体源以及与气体分配组件耦合的反应气体源处理盖组件。

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