PROCESS CHAMBER LID DESIGN WITH BUILT-IN PLASMA SOURCE FOR SHORT LIFETIME SPECIES

摘要

The embodiment of the present invention generally closes the what apparatus and method for of what deposition materials, and especially Guan Yushe is with the vapor deposition chamber of the deposition materials during plasma enhanced processing procedure. In one embodiment, the chamber that one or more substrates are handled with what is provided. The chamber body includes: a chamber body defines a process volume; One substrate support, configuration is in the process volume and sets to support one or more substrates; One processing procedure cap assemblies configure above the substrate support, and wherein the processing procedure cap assemblies have a plasma-based cavity, which sets to generate a plasma-based and provide one or more free radical species to the process volume; One RF (radio frequency) power source couples gas distribution assembly; One plasma-based forms gas source, couples the processing procedure cap assemblies; And a reactant gas source, couple the processing procedure cap assemblies.