ATOMIC LAYER DEPOSITION OF CHEMICAL PASSIVATION LAYERS AND HIGH PERFORMANCE ANTI-REFLECTION COATINGS ON BACK-ILLUMINATED DETECTORS

摘要

A back-illuminated silicon photodetector has a layer of AI₂O₃ deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The AI₂O₃ layer has an antireflection coating deposited thereon. The AI₂O₃ layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The AI₂O₃ layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The AI₂O₃ layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.