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Ultrathin Al_2O_3 passivation layer-wrapped Ag@TiO_2 nanorods by atomic layer deposition for enhanced photoelectrochemical performance

机译:原子层沉积超薄Al_2O_3钝化层包裹的Ag @ TiO_2纳米棒增强光电化学性能

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摘要

In this study, new one-dimensional (1D) titanium dioxide nanorod (TONR) array films sensitized with Ag nanoparticles (ANPs) and coated with ultrathin alumina (Al2O3) passivation layer were synthesized. ANPs and Al2O3 passivation layer were deposited via magnetron sputtering technology and atomic layer deposition (ALD) method, respectively. The morphology, structure, composition, optical properties, and PEC properties on varied amounts ANPs and tailored Al2O3 -modulated TONR films were investigated systematically. The results exhibited that with an optimal thickness of the Al2O3 layer and a suitable sputtering time of ANPs, the TONR arrays can effectively restrain the recombination of electron-holes and improve the PEC performance. Furthermore, 20 cycles of Al2O3 passivation on Ag10@TONR shows the optimal PEC performance with the maximum photocurrent density (similar to 0.34 mA/cm(2)), which is almost 5 times higher than that of Ag10@TONR (similar to 56.9 mu A/cm(2)) and 30 times as much as that of pure TONR (similar to 11.3 mu A/cm(2)). The superior PEC performance of Al2O3-Ag@TONR is ascribed to the local surface plasmon resonance (LSPR) effect of ANPs, and the passivation effect of the Al2O3 coating layer.
机译:在这项研究中,合成了新的一维(1D)二氧化钛纳米棒(TONR)阵列膜,该膜用Ag纳米颗粒(ANP)敏化并涂有超薄氧化铝(Al2O3)钝化层。通过磁控溅射技术和原子层沉积(ALD)方法分别沉积ANP和Al2O3钝化层。系统地研究了不同数量的ANP和定制的Al2O3调制的TONR膜的形貌,结构,组成,光学性质和PEC性质。结果表明,在最佳的Al2O3层厚度和适当的ANP溅射时间的情况下,TONR阵列可以有效地抑制电子-空穴的复合并改善PEC性能。此外,在Ag10 @ TONR上进行20个Al2O3钝化处理显示了最佳的PEC性能,具有最大的光电流密度(约0.34 mA / cm(2)),几乎是Ag10 @ TONR(约56.9μM)的5倍。 A / cm(2)),是纯TONR的30倍(类似于11.3μA/ cm(2))。 Al2O3-Ag @ TONR的优异PEC性能归因于ANP的局部表面等离子体共振(LSPR)效应和Al2O3涂层的钝化作用。

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