PARTIALLY-DEPLETED SILICON-ON-INSULATOR DEVICE WITH BODY CONTACT STRUCTURE

摘要

A partially-depleted silicon-on-insulator device with body contact structure is provided. The active region of the device comprises a gate region (80), a body region (70), an N type source region (50), an N type drain region (40), a body contact region (60) and a silicide (100), wherein the source region (50) and the drain region (40) are arranged on both sides on the front portion of the body region (70) respectively, the body contact region (60) is arranged on the rear portion of the body region (70) and paralleled with the source region (50), the silicide (100) is arranged on the body contact region (60) and the source region (50) and contacted with both of them, the gate region (80) on the body region (70) is L-shaped extending outward from the rear portion of the body region (70). Such structure could restrain the floating body effect, without increasing the chip's area, and simplify the process.