首页>
外国专利>
Method using amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films
Method using amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films
展开▼
机译:使用氨基乙烯基硅烷前体沉积固有压缩应力的SiN薄膜的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention is a method of depositing an intrinsically compressively stressed silicon nitride (SiN) or silicon carbonitride (SiCN) thin films, comprising depositing the film from an amino vinylsilane-based precursor using plasma enhanced chemical vapor deposition (PECVD). Exemplary amino vinylsilane-based precursors include Bis(iso-propylamino)vinylmethylsilane (BIPAVMS) and Bis(iso-propylamino)divinylsilane (BIPADVS).
展开▼